Samsung introduces DDR3 memory chips for 4 Gb

Samsung has announced the finalization of what he presents as the first memory modules to 4 Gb (or 512 MB) of DDR3. Engraved in 50 nanometers, these chips would result from new methods of assembly, to increase the density and capacity to achieve this record. The South Korean evokes an operating voltage of 1.35 V, with increased energy efficiency compared to previous generations, and a theoretical bandwidth of 1.6 Gb / s.

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At a rate of 32 modules for PCB, Samsung said that it becomes easy to develop strips 16GB meeting the necessary prerequisites for integration into a server or workstation performance. In designing bars equipped with two layers of memory modules, the manufacturer itself even able to design strips 32GB Currently, Samsung is careful not to raise prices, the entry into production or date marketing

This new memory chip provide double capicity compared to the previous 2 GB memory. The memory fetures a working voltage of 1.35 volts with a max speed of 1.6 GBPS. According to the company, 16 GB memory module configuration can reduce the power consumption up to 40 percent because of the chip's higher volume and they use only half of the DRAM.